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PD - 91895
IRLL024N
HEXFET(R) Power MOSFET
l l l l l l
Surface Mount Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating Fast Switching Fully Avalanche Rated
D
VDSS = 55V RDS(on) = 0.065
G S
ID = 3.1A
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The SOT-223 package is designed for surface-mount using vapor phase, infra red, or wave soldering techniques. Its unique package design allows for easy automatic pickand-place as with other SOT or SOIC packages but has the added advantage of improved thermal performance due to an enlarged tab for heatsinking. Power dissipation of 1.0W is possible in a typical surface mount application.
S O T -2 2 3
Absolute Maximum Ratings
Parameter
ID @ TA = 25C ID @ TA = 25C ID @ TA = 70C IDM PD @TA = 25C PD @TA = 25C VGS EAS IAR EAR dv/dt TJ, TSTG Continuous Drain Current, VGS @ 10V** Continuous Drain Current, VGS @ 10V* Continuous Drain Current, VGS @ 10V* Pulsed Drain Current Power Dissipation (PCB Mount)** Power Dissipation (PCB Mount)* Linear Derating Factor (PCB Mount)* Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy* Peak Diode Recovery dv/dt Junction and Storage Temperature Range
Max.
4.4 3.1 2.5 12 2.1 1.0 8.3 16 120 3.1 0.1 5.0 -55 to + 150
Units
A
W W
mW/C
V mJ A mJ V/ns C
Thermal Resistance
Parameter
RJA RJA Junction-to-Amb. (PCB Mount, steady state)* Junction-to-Amb. (PCB Mount, steady state)**
Typ.
90 50
Max.
120 60
Units
C/W
* When mounted on FR-4 board using minimum recommended footprint. ** When mounted on 1 inch square copper board, for comparison with other SMD devices.
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1
6/15/99
IRLL024N
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss
Min. 55 --- --- --- --- 1.0 3.3 --- --- --- --- --- --- --- --- --- --- --- --- --- ---
Typ. --- 0.048 --- --- --- --- --- --- --- --- --- 10.4 1.5 5.5 7.4 21 18 25 510 140 58
Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, ID = 1mA 0.065 VGS = 10V, ID = 3.1A 0.080 VGS = 5.0V, ID = 2.5A 0.100 VGS = 4.0V, ID = 1.6A 2.0 V VDS = VGS, ID = 250A --- S VDS = 25V, ID = 1.9 A 25 VDS = 55V, VGS = 0V A 250 VDS = 44V, VGS = 0V, TJ = 125C 100 VGS = 16V nA -100 VGS = -16V 15.6 ID = 1.9A 2.3 nC VDS = 44V 8.3 VGS = 5.0V, See Fig. 6 and 9 --- VDD = 28V --- ID = 1.9A ns --- RG = 24 --- RD = 15 , See Fig. 10 --- VGS = 0V --- pF VDS = 25V --- = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
IS
ISM
VSD trr Qrr ton
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time
Min. Typ. Max. Units
Conditions MOSFET symbol --- --- 3.1 showing the A integral reverse --- --- 12 p-n junction diode. --- --- 1.0 V TJ = 25C, IS = 1.9A, VGS = 0V --- 39 58 ns TJ = 25C, IF = 1.9A --- 63 94 nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
ISD 1.9A, di/dt 270A/s, VDD V(BR)DSS,
TJ 150C
Starting TJ = 25C, L = 25 mH
RG = 25, IAS = 3.1A. (See Figure 12)
Pulse width 300s; duty cycle 2%.
2
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IRLL024N
100
VGS 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 2.7V TOP
100
I D , Drain-to-Source Current (A)
I D , Drain-to-Source Current (A)
VGS 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 2.7V TOP
10
10
2.7V
20s PULSE WIDTH TJ = 150 C
1 10 100
2.7V
20s PULSE WIDTH TJ = 25 C
1 10 100
1 0.1
1 0.1
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
2.0
ID = 3.1A
I D , Drain-to-Source Current (A)
TJ = 25 C TJ = 150 C
RDS(on) , Drain-to-Source On Resistance (Normalized)
1.5
10
1.0
0.5
1 2 4 6
V DS = 25V 20s PULSE WIDTH 8 10 12
0.0 -60 -40 -20
VGS = 10V
0 20 40 60 80 100 120 140 160
VGS , Gate-to-Source Voltage (V)
TJ , Junction Temperature ( C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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IRLL024N
1000
VGS , Gate-to-Source Voltage (V)
800
VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd
15
ID = 1.9A
12
C, Capacitance (pF)
VDS = 44V VDS = 27V VDS = 11V
600
Ciss
9
400
6
200
Coss Crss
3
0 1 10 100
0 0 4 8
FOR TEST CIRCUIT SEE FIGURE 13
12 16 20
VDS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
100
100
OPERATION IN THIS AREA LIMITED BY RDS(on)
ISD , Reverse Drain Current (A)
10
I D , Drain Current (A)
10
100us
TJ = 150 C
1ms 1
1
10ms
TJ = 25 C V GS = 0 V
0.6 0.8 1.0 1.2 1.4
0.1 0.4
0.1 0.1
TC = 25 C TJ = 150 C Single Pulse
1 10 100 1000
VSD ,Source-to-Drain Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
4
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IRLL024N
4.0
VDS VGS
RD
D.U.T.
+
I D , Drain Current (A)
3.0
RG
- VDD
5.0V
2.0
Pulse Width 1 s Duty Factor 0.1 %
1.0
Fig 10a. Switching Time Test Circuit
VDS 90%
0.0 25 50 75 100 125 150
TC , Case Temperature
( C)
10% VGS
td(on) tr t d(off) tf
Fig 9. Maximum Drain Current Vs. Case Temperature
Fig 10b. Switching Time Waveforms
1000
Thermal Response (Z thJA )
100 D = 0.50 0.20 10 0.10 0.05 0.02 0.01 1 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.01 0.1 1 10 100 P DM t1 t2
SINGLE PULSE (THERMAL RESPONSE) 0.1 0.00001 0.0001 0.001
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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IRLL024N
300
EAS , Single Pulse Avalanche Energy (mJ)
TOP
250
1 5V
BOTTOM
ID 1.4A 2.5A 3.1A
200
VD S
L
D R IV E R
150
RG
10V tp
D .U .T
IA S
+ V - DD
A
100
0.0 1
50
Fig 12a. Unclamped Inductive Test Circuit
0 25 50 75 100 125 150
V (B R )D SS tp
Starting TJ , Junction Temperature ( C)
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
IAS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator Same Type as D.U.T.
50K
QG
12V
.2F .3F
5.0 V
QGS VG QGD
VGS
3mA
D.U.T.
+ V - DS
Charge
IG
ID
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
6
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IRLL024N
Package Outline
SOT-223 (TO-261AA) Outline
Part Marking Information
SOT-223
E X A M P L E : T H IS IS A N IR FL 0 14 W A FER LO T CO D E XXXXXX D A TE CO D E (Y W W ) Y = LA S T D IG IT O F TH E Y E A R W W = W E EK P A R T NU M B E R IN TE RN A TIO NA L RE CT IF IE R LO G O F L0 14 31 4
TOP
B O TT O M
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IRLL024N
Tape & Reel Information
SOT-223 Outline
4 .1 0 (.1 6 1) 3 .9 0 (.1 5 4) 1 .8 5 (.0 7 2 ) 1 .6 5 (.0 6 5 ) 0 .3 5 (.0 1 3 ) 0 .2 5 (.0 1 0 )
TR
2 .0 5 (.0 8 0 ) 1 .9 5 (.0 7 7 )
7 .5 5 (.2 9 7 ) 7 .4 5 (.2 9 4 ) 7 .6 0 (.2 9 9 ) 7 .4 0 (.2 9 2 ) 1 .6 0 (.0 6 2 ) 1 .5 0 (.0 5 9 ) TYP . F E E D D IR E C T IO N 1 2 .1 0 (.4 7 5 ) 1 1 .9 0 (.4 6 9 ) NOTES : 1 . C O N T R O L L IN G D IM E N S IO N : M IL L IM E T E R . 2 . O U T L IN E C O N F O R M S T O E IA -4 8 1 & E IA -5 41 . 3 . E A C H O 3 3 0 .0 0 (1 3 .0 0 ) R E E L C O N T A IN S 2,50 0 D E V IC E S . 1 3 .2 0 (.5 1 9 ) 1 2 .8 0 (.5 0 4 ) 1 5.40 (.6 0 7 ) 1 1.90 (.4 6 9 ) 4 7 .1 0 (.2 79 ) 6 .9 0 (.2 72 )
1 6 .3 0 (.6 4 1 ) 1 5 .7 0 (.6 1 9 )
2 .3 0 (.0 9 0 ) 2 .1 0 (.0 8 3 )
330.0 0 (13.000) M AX.
5 0.0 0 (1 .9 6 9 ) M IN .
N O T ES : 1 . O U T LIN E C O M F O R M S T O E IA -4 1 8 -1 . 2 . C O N T R O L L IN G D IM E N S IO N : M IL L IM E T E R .. 3 . D IM E N S IO N M E A S U R E D @ H U B . 4 . IN C L U D E S F L A N G E D IS T O R T IO N @ O U T E R E D G E .
1 4 .4 0 (.5 6 6 ) 1 2 .4 0 (.4 8 8 ) 3
1 8 .4 0 (.7 2 4 ) M AX . 4
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936 http://www.irf.com/ Data and specifications subject to change without notice. 6/99
8
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